1. In a semiconductor the movement of holes is due to:
a) Movements of electrons in the conduction band
b) Movement of holes in the conduction band
c) Movement of holes in the valence band
d) Movement of electrons in the valence band
2. The forbidden energy gap of germanium is:
a) 0.3 eV
b) 3.5 eV
c) 0.72 eV
d) 1.1 eV
3. Conduction of electrons will have more mobility than the holes because they:
a) Have negative charge
b) They need less energy to move them
c) They are lighter
d) Experience collisions less frequently
4. Which one of the following material is not a semiconductor material:
a) Silica
b) Germanium
c) Selenium
d) Gallium Arsenide
5. In an Intrinsic semi conductor, the mobility of electrons in a conduction band is:
a) Zero
b) Less than the mobility of holes in the valence band
c) Equal to the mobility of holes in the valence band
d) Greater than the mobility of holes in the valence band
6. The conductivity of semiconductor depends on:
a) Number of current carriers present per unit volume
b) The mobility of current carriers
c) Both (a) and (b)
d) None of the above
7. On increasing the temperature of the intrinsic semiconductor:
a) Resistance of the semiconductor increases
b) Energy of the atom increases
c) Holes are created in the conduction band
d) Atomic radius is reduced
8. Higher the electric field intensity
a) Lower will be the mobility
b) Higher will be the mobility
c) Mobility remains the same
d) First increases upto 105 V/m and then decreases
9. Which is the pair of acceptor elements:
a) Arsenic and boron
b) Antimony and indium
c) Phosphorous and aluminium
d) Gallium and boron
10. For N-type semiconductor material the doping material is:
a) A tetravalent impurity
b) A pentavalent impurity
c) A trivalent impurity
d) Germanium
11. The temperature coefficient of an intrinsic semiconductor is:
a) Zero
b) Poitive
c) Negative
d) None of the above
12. Electron volt is the unit of:
a) Power
b) Work
c) Potential
d) Charge
a) Movements of electrons in the conduction band
b) Movement of holes in the conduction band
c) Movement of holes in the valence band
d) Movement of electrons in the valence band
2. The forbidden energy gap of germanium is:
a) 0.3 eV
b) 3.5 eV
c) 0.72 eV
d) 1.1 eV
3. Conduction of electrons will have more mobility than the holes because they:
a) Have negative charge
b) They need less energy to move them
c) They are lighter
d) Experience collisions less frequently
4. Which one of the following material is not a semiconductor material:
a) Silica
b) Germanium
c) Selenium
d) Gallium Arsenide
5. In an Intrinsic semi conductor, the mobility of electrons in a conduction band is:
a) Zero
b) Less than the mobility of holes in the valence band
c) Equal to the mobility of holes in the valence band
d) Greater than the mobility of holes in the valence band
6. The conductivity of semiconductor depends on:
a) Number of current carriers present per unit volume
b) The mobility of current carriers
c) Both (a) and (b)
d) None of the above
7. On increasing the temperature of the intrinsic semiconductor:
a) Resistance of the semiconductor increases
b) Energy of the atom increases
c) Holes are created in the conduction band
d) Atomic radius is reduced
8. Higher the electric field intensity
a) Lower will be the mobility
b) Higher will be the mobility
c) Mobility remains the same
d) First increases upto 105 V/m and then decreases
9. Which is the pair of acceptor elements:
a) Arsenic and boron
b) Antimony and indium
c) Phosphorous and aluminium
d) Gallium and boron
10. For N-type semiconductor material the doping material is:
a) A tetravalent impurity
b) A pentavalent impurity
c) A trivalent impurity
d) Germanium
11. The temperature coefficient of an intrinsic semiconductor is:
a) Zero
b) Poitive
c) Negative
d) None of the above
12. Electron volt is the unit of:
a) Power
b) Work
c) Potential
d) Charge
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