Electronic Devices Objective Questions Answers

1. Junction breakdown occurs:

a) With forward bias

b) With reverse bias

c) Under high temperature condition

d) Because of excess heating of the diode

B

2. In a P-N junction the barrier potential offers opposition to only:

a) Holes in P-region

b) Free electrons in N-region

c) Majority carriers in both regions

d) Minority carriers in both regions 

C

3. In the depletion region in the P-N junction there are:

a) No charges

b) No current

c) No mobile charges

d) No electron

C

4. For highly doped diode:

a) Zener breakdown is likely to take place

b) Avalanche breakdown is likely to take place

c) Either (a) or (b) can take place

d) Neither (a) nor (b) can take place

A

5. Tunnel diode is a:

a) Power diode

b) Has light doping

c) Has heavy doping

d) Is a reverse recovery diode

C

6. Zener diode is used as the main component in dc power supply for:

a) Rectification

b) Voltage regulation

c) Filter action

d) Both (a) and (b)

B

7. Reverse resistance of a diode is of the order of:

a) Milli ohm

b) Ohm

c) Kilo ohm

d) Mega ohm

D

8. LEDs are fabricated from:

a) Silicon

b) Germanium

c) Si or Ge

d) Gallium arsenide

D

9. Schottky barrier diode can be used as:

a) Low noise amplifier

b) Variable capacitance device

c) Power supply rectifier

d) Low level detector

D

10. The arrow head of transistor symbol always shows the direction of:

a) Electron flow in emitter region

b) Conventional current flow

c) Majority carrier flow in the emitter region

d) Minority carrier flow in the emitter region

B